CSD-4N SCR DATASHEET

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CSD-4N ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 30 A
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.8 V
Triggering gate current IGT 200 mA
Holding current IH 2 mA
Package TO-252

CSD-4N Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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CSD-4N Datasheet. Page #1

CSD-4N
 datasheet

Page #2

CSD-4N
 datasheet #2

Description

CSD-4M CSD-4N www.centralsemi.com SURFACE MOUNT DESCRIPTION: SILICON CONTROLLED RECTIFIERS The CENTRAL SEMICONDUCTOR CSD-4M and 4.0 AMP, 600 THRU 800 VOLT CSD-4N are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CSD-4M CSD-4N UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 600 800 V RMS On-State Current (TC=85°C) IT(RMS) 4.0 A Peak One Cycle Sur