CSDD-8N SCR DATASHEET

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CSDD-8N ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum RMS on-state current IT(RMS) 8 A
Non repetitive surge peak on-state current ITSM 70 A
Triggering gate voltage VGT 1.5 V
Peak on-state voltage drop VTM 1.8 V
Triggering gate current IGT 0.02 mA
Holding current IH 20 mA
Package TO-263

CSDD-8N Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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CSDD-8N Datasheet. Page #1

CSDD-8N
 datasheet

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CSDD-8N
 datasheet #2

Description

CSDD-8M CSDD-8N www.centralsemi.com SURFACE MOUNT DESCRIPTION: SILICON CONTROLLED RECTIFIER The CENTRAL SEMICONDUCTOR CSDD-8M series 8 AMP, 600 THRU 800 VOLTS type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CSDD-8M CSDD-8N UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 600 800 V RMS On-State Current (TC=90°C)