DCR1473SY12 SCR DATASHEET

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DCR1473SY12 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 150 W
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 4135 A
Maximum RMS on-state current IT(RMS) 6495 A
Non repetitive surge peak on-state current ITSM 64000 A
Critical repetitive rate of rise of on-state current dI/dt 250 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -55..125 °C
Junction to case thermal resistance RTH(j-c) 0.01 K/W
Triggering gate voltage VGT 4 V
Peak on-state voltage drop VTM 0.82 V
Triggering gate current IGT 400 mA

DCR1473SY12 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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DCR1473SY12 Datasheet. Page #1

DCR1473SY12
 datasheet

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DCR1473SY12
 datasheet #2

Description

DCR1473SY DCR1473SY Phase Control Thyristor Replaces August 2000 version, DS4652-4.1 DS4652-5.1 November 2002 PACKAGE OUTLINE KEY PARAMETERS VDRM 1200V IT(AV) 4135A ITSM 64000A dVdt* 1000V/µs dI/dt 500A/µs *Higher dV/dt selections available Outline type code: Y See Package Details for further information. Fig. 1 Package outline VOLTAGE RATINGS Part Number Repetitive Peak Voltages Conditions VDRM VRRM V 1200 DCR1473SY12 T = 0˚ to 125˚C. vj IDRM = IRRM = 250mA. VDRM,