DCR504ST13 SCR DATASHEET

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DCR504ST13 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 100 W
Maximum repetitive peak and off-state voltage VDRM 1300 V
Maximum average on-state current IT(AVR) 456 A
Maximum RMS on-state current IT(RMS) 717 A
Non repetitive surge peak on-state current ITSM 5500 A
Critical repetitive rate of rise of on-state current dI/dt 350 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -55..125 °C
Junction to case thermal resistance RTH(j-c) 0.06 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.05 V
Triggering gate current IGT 150 mA
Holding current IH 30 mA
Package T

DCR504ST13 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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DCR504ST13 Datasheet. Page #1

DCR504ST13
 datasheet

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DCR504ST13
 datasheet #2

Description

DCR504ST DCR504ST Phase Control Thyristor Advance Information Supersedes January 2000version, DS4448 -4.0 DS4448 -5.0 July 2001 FEATURES KEY PARAMETERS Double Side Cooling VDRM 1400V High Surge Capability IT(AV) 456A High Mean Current ITSM 6800A Fatigue Free dVdt 1000V/µs dI/dt 700A/µs APPLICATIONS High Power Drives High Voltage Power Supplies DC Motor Control VOLTAGE RATINGS Type Number Repetitive Peak Conditions Voltages VDRM VRRM V 1400 DCR504ST14 Tvj = 0