DG646BH Gate-turn-off DATASHEET

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DG646BH ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Gate-turn-off
Maximum repetitive peak and off-state voltage VDRM 2500 V
Maximum average on-state current IT(AVR) 2500 A
Critical repetitive rate of rise of on-state current dI/dt 300 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Junction to case thermal resistance RTH(j-c) 0.02 K/W

DG646BH Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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DG646BH Datasheet. Page #1

DG646BH
 datasheet

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DG646BH
 datasheet #2

Description

DG646BH25 Gate Turn-off Thyristor DS4092-5 July 2014 (LN31756) FEATURES KEY PARAMETERS  Double Side Cooling VDRM 2500V  High Reliability In Service IT(AV) 867A  High Voltage Capability ITCM 2500A dVD/dt 1000V/µs  Fault Protection Without Fuses dIT/dt 300A/µs  High Surge Current Capability  Turn-off Capability Allows Reduction in Equipment Size and Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requireme