DG648BH Gate-turn-off DATASHEET

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DG648BH ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Gate-turn-off
Maximum repetitive peak and off-state voltage VDRM 4500 V
Maximum average on-state current IT(AVR) 2000 A
Critical repetitive rate of rise of on-state current dI/dt 300 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Junction to case thermal resistance RTH(j-c) 0.02 K/W

DG648BH Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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DG648BH Datasheet. Page #1

DG648BH
 datasheet

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DG648BH
 datasheet #2

Description

DG648BH45 DG648BH45 Gate Turn-off Thyristor DS4093-4 July 2014 (LN31736) APPLICATIONS KEY PARAMETERS ITCM 2000A Variable speed A.C. motor drive inverters (VSD-AC) VDRM 4500V Uninterruptable Power Supplies IT(AV) 745A High Voltage Converters dVD/dt 1000V/µs Choppers diT/dt 300A/µs Welding Induction Heating DC/DC Converters FEATURES Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capab