DG858BW Gate-turn-off DATASHEET

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DG858BW ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Gate-turn-off
Maximum repetitive peak and off-state voltage VDRM 4500 V
Maximum average on-state current IT(AVR) 4000 A
Critical repetitive rate of rise of on-state current dI/dt 300 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Junction to case thermal resistance RTH(j-c) 0.01 K/W

DG858BW Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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DG858BW Datasheet. Page #1

DG858BW
 datasheet

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DG858BW
 datasheet #2

Description

DG858BW45 DG858BW45 Gate Turn-off Thyristor DS4096-5 July 2014 (LN31733) FEATURES KEY PARAMETERS ITCM 3000A Double Side Cooling VDRM 4500V High Reliability In Service IT(AV) 1180A High Voltage Capability dVD/dt 1000V/µs Fault Protection Without Fuses diT/dt 300A/µs High Surge Current Capability Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements APPLICATIONS Variab