DGT305SE Gate-turn-off DATASHEET

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DGT305SE ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Gate-turn-off
Maximum repetitive peak and off-state voltage VDRM 1800 V
Maximum average on-state current IT(AVR) 700 A
Critical repetitive rate of rise of on-state current dI/dt 500 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Junction to case thermal resistance RTH(j-c) 0.07 K/W

DGT305SE Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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DGT305SE Datasheet. Page #1

DGT305SE
 datasheet

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DGT305SE
 datasheet #2

Description

DGT305SE DGT305SE Gate Turn-off Thyristor DS5519-4 July 2014 (LN31740) FEATURES KEY PARAMETERS Double Side Cooling ITCM 700A High Reliability In Service VDRM 1800V High Voltage Capability IT(AV) 240A Fault Protection Without Fuses dVD/dt 500V/µs High Surge Current Capability diT/dt 500A/µs Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements APPLICATIONS Variable s