DRA8B SCR DATASHEET

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DRA8B ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 5 W
Maximum repetitive peak and off-state voltage VDRM 100 V
Maximum average on-state current IT(AVR) 8 A
Maximum RMS on-state current IT(RMS) 12.6 A
Non repetitive surge peak on-state current ITSM 120 A
Critical rate of rise of off-state voltage dV/dt 30 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 3 K/W
Triggering gate voltage VGT 1.5 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 40 mA
Holding current IH 60 mA
Package TO-220

DRA8B Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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DRA8B Datasheet. Page #1

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 datasheet

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