FS0802DI SCR DATASHEET

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FS0802DI ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum RMS on-state current IT(RMS) 8 A
Non repetitive surge peak on-state current ITSM 70 A
Critical rate of rise of off-state voltage dV/dt 5 V/µs
Package TO-251

FS0802DI Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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FS0802DI Datasheet. Page #1

FS0802DI
 datasheet

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FS0802DI
 datasheet #2

Description

FS0802.I SENSITIVE GATE SCR IPAK (Plastic) Gate Trigger Current On-State Current 8 Amp < 200 mA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled G Rectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit A I On-state Current 180º Conduction Angle, Tc = 110