FS1009BH SCR DATASHEET

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FS1009BH ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum RMS on-state current IT(RMS) 10 A
Non repetitive surge peak on-state current ITSM 100 A
Critical rate of rise of off-state voltage dV/dt 200 V/µs
Triggering gate current IGT 2 mA
Package TO-220AB

FS1009BH Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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FS1009BH Datasheet. Page #1

FS1009BH
 datasheet

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FS1009BH
 datasheet #2

Description

FS1009.H STANDARD SCR On-State Current Gate Trigger Current T O 2 2 0 - A B 10 Amp 2 mA to 15 mA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled Rectifier use a high performance K A G PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit IT(RMS) On-state Current 180º Conduction Angle, Tc = 11