FS1009MH SCR DATASHEET

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FS1009MH ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 10 A
Non repetitive surge peak on-state current ITSM 100 A
Critical rate of rise of off-state voltage dV/dt 200 V/µs
Triggering gate current IGT 2 mA
Package TO-220AB

FS1009MH Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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FS1009MH Datasheet. Page #1

FS1009MH
 datasheet

Page #2

FS1009MH
 datasheet #2

Description

FS1009.H STANDARD SCR On-State Current Gate Trigger Current T O 2 2 0 - A B 10 Amp 2 mA to 15 mA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled Rectifier use a high performance K A G PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit IT(RMS) On-state Current 180º Conduction Angle, Tc = 11