FS1610DG SCR DATASHEET

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FS1610DG ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum RMS on-state current IT(RMS) 16 A
Non repetitive surge peak on-state current ITSM 190 A
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Triggering gate current IGT 2 mA
Package TO-263

FS1610DG Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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FS1610DG Datasheet. Page #1

FS1610DG
 datasheet

Page #2

FS1610DG
 datasheet #2

Description

FS1610.G STANDARD SCR D 2 P A K On-State Current Gate Trigger Current 16 Amp 2 mA to 25 mA A A Off-State Voltage 200 V ÷ 800 V A A K K G G These series of Silicon Controlled Rectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit I On-state Current 180º Conduction Angle, Tc =