FS2510BG SCR DATASHEET

DATASHEET SEARCH FORM

FS2510BG ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum RMS on-state current IT(RMS) 25 A
Non repetitive surge peak on-state current ITSM 300 A
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Triggering gate current IGT 2 mA
Package TO-263

FS2510BG Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

FS2510BG Datasheet. Page #1

FS2510BG
 datasheet

Page #2

FS2510BG
 datasheet #2

Description

FS2510.G STANDARD SCR D 2 P A K On-State Current Gate Trigger Current 25 Amp 2 mA to 25 mA A A Off-State Voltage 200 V ÷ 800 V A A K K G G These series of Silicon Controlled Rectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER CONDITIONS Value Unit IT(RMS) On-state Current 180º Conduction Angle