GSC50CT20 SCR DATASHEET

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GSC50CT20 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum average on-state current IT(AVR) 50 A
Maximum RMS on-state current IT(RMS) 80 A
Non repetitive surge peak on-state current ITSM 1430 A
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Junction to case thermal resistance RTH(j-c) 0.35 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 100 mA
Holding current IH 200 mA
Package TO-208AC

GSC50CT20 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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GSC50CT20 Datasheet. Page #1

GSC50CT20
 datasheet

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GSC50CT20
 datasheet #2

Description

GSC50CT20 thru GSC50CT160 VRRM = 200 V - 1600 V Silicon Medium Power IF(AV) = 50 A Thyristor DO-208AC Package Features • Types up to 1600 V VRRM • Superior surge capabilities • Low thermal resistance • Excellent dynamic characteristics • Vacuum welding technology Maximum ratings, at Tc= 94°C for 20-120; Tc= 90°C for 160, unless otherwise specified Parameter Symbol Conditions GSC50CT20 GSC50CT40 GSC50CT120 GSC50CT160 Unit VRRM Repetitive peak reverse voltage 200 40