GSC51CT20 SCR DATASHEET

DATASHEET SEARCH FORM

GSC51CT20 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum average on-state current IT(AVR) 50 A
Maximum RMS on-state current IT(RMS) 95 A
Non repetitive surge peak on-state current ITSM 1200 A
Critical rate of rise of off-state voltage dV/dt 200 V/µs
Junction to case thermal resistance RTH(j-c) 0.35 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 2.3 V
Triggering gate current IGT 100 mA
Holding current IH 200 mA
Package TO-208AC

GSC51CT20 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

GSC51CT20 Datasheet. Page #1

GSC51CT20
 datasheet

Page #2

GSC51CT20
 datasheet #2

Description

GSC51CT20 VRRM = 200 V Silicon Medium Power IF(AV) = 50 A Thyristor DO-208AC Package Features • 200 V VRRM • Superior surge capabilities • Low thermal resistance • Excellent dynamic characteristics • Vacuum welding technology Maximum ratings, at Tc= 94°C, unless otherwise specified Parameter Symbol Conditions 51CT20 Unit V VRRM R titi k lt 200 V Repetitive peak reverse voltage 200 V VRSM Non-repetitive peak voltage 300 V IRRM TJ=TJ max Repetitive peak reverse