H76KPN SCR DATASHEET

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H76KPN ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum average on-state current IT(AVR) 2300 A
Non repetitive surge peak on-state current ITSM 22000 A
Maximum operating junction and storage temperature range Tstg, Tj ..125 °C
Junction to case thermal resistance RTH(j-c) 0.01 K/W
Peak on-state voltage drop VTM 2.2 V

H76KPN Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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H76KPN Datasheet. Page #1

H76KPN
 datasheet

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H76KPN
 datasheet #2

Description

H76KPN PHASE CONTROL THYRISTOR Features  Center amplifying gate  Metal case with ceramic insulator IT(AV) 1920 A  Low on-state and switching losses VDRM/VRRM 4500-5500V Typical Applications ITSM 22 kA  AC controllers  DC and AC motor control I2t 2420 103A2S  Controlled rectifiers VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max TC=55C 2300 180 half sine wave 50Hz IT(AV) Mean on-state current 125 A Double side co