HMX1225 SCR DATASHEET

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HMX1225 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.1 W
Maximum repetitive peak and off-state voltage VDRM 380 V
Maximum average on-state current IT(AVR) 0.5 A
Maximum RMS on-state current IT(RMS) 0.8 A
Critical repetitive rate of rise of on-state current dI/dt 30 A/µs
Critical rate of rise of off-state voltage dV/dt 25 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 200 K/W
Junction to case thermal resistance RTH(j-c) 100 K/W
Triggering gate voltage VGT 0.8 V
Triggering gate current IGT 0.2 mA
Holding current IH 5 mA
Package SOT-89

HMX1225 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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HMX1225 Datasheet. Page #1

HMX1225
 datasheet

Page #2

HMX1225
 datasheet #2

Description

Spec. No. : HM200501 HI-SINCERITY Issued Date : 2000.07.01 Revised Date : 2005.07.07 MICROELECTRONICS CORP. Page No. : 1/4 HMX1225 / HMM1225 0.8A 300/380 VOLTAGE SCRS IGT<200uA Description The HMX1225/HMM1225 series silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. SOT-89 Absolute Maximum Ratings (TA=25°C) Parameter Part No. Symbol Min. Max. Unit Test Conditions HMX1225 VDRM 380 - V