HSB100-6 SCR DATASHEET

DATASHEET SEARCH FORM

HSB100-6 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum RMS on-state current IT(RMS) 0.8 A
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 0.2 mA
Holding current IH 5 mA
Package TO-92

HSB100-6 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

HSB100-6 Datasheet. Page #1

HSB100-6
 datasheet

Page #2

HSB100-6
 datasheet #2

Description

HSB100-6 ◎ SEMIHOW REV.A0,Dec 2007 HSB100-6 HSB100-6 Sensitive Gate VDRM = 400V Silicon Controlled Rectifiers IT(RMS) = 0.8A Features • Repetitive Peak Off-State Voltage : 400V • R.M.S On-State Current(IT(RMS)=0.8A) • Low On-State Voltage (1.2V(Typ.)@ ITM) TO-92 General Description PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detec