HSB100-8 SCR DATASHEET

DATASHEET SEARCH FORM

HSB100-8 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 0.8 A
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 0.2 mA
Holding current IH 5 mA
Package TO-92

HSB100-8 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

HSB100-8 Datasheet. Page #1

HSB100-8
 datasheet

Page #2

HSB100-8
 datasheet #2

Description

VDRM = 600 V HSB100-8 IT(RMS) = 0.8A Silicon Controlled Rectifier 3.Anode Symbol FEATURES 2.Gate  Repetitive Peak Off-State Voltage: 600V 1.Cathode  R.M.S On-state Current (IT(RMS)=0.8A)  Average On-state Current (IT(AV)=0.5A)  Low On-State Voltage (1.2VTyp@ITM) 1. K 2. G 3. A 3 2 General Description 1 HSB100-8 PNPN Devices designed for high volume, line-powered consumer applications such as relay and lamp driver, small motor controls, g