HSC106M SCR DATASHEET

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HSC106M ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 4 A
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 2.2 V
Triggering gate current IGT 0.2 mA
Holding current IH 3 mA
Package TO-225

HSC106M Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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HSC106M Datasheet. Page #1

HSC106M
 datasheet

Page #2

HSC106M
 datasheet #2

Description

Dec 2014 VDRM = 400V / 600 V HSC106D/M Silicon Controlled Rectifier IT(RMS) = 4.0A 2.Anode Symbol FEATURES 3.Gate  Repetitive Peak Off-State Voltage (VDRM=400V/600V) 1.Cathode  R.M.S On-State Current (IT(RMS)=4.0A)  Average On-State Current (IT(AV)=2.55A) TO-126 1. K 2. A 3. G General Description 1 2 3 HSC106D/M Glassivated PNPN devices designed for high volume consumer applications such as temperature, light and speed control, process