IQCG20S120C3 SCR DATASHEET

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IQCG20S120C3 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 20 A
Maximum operating junction and storage temperature range Tstg, Tj ..85 °C
Triggering gate voltage VGT 1.3 V
Peak on-state voltage drop VTM 1.3 V
Triggering gate current IGT 60 mA
Package TO-247

IQCG20S120C3 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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IQCG20S120C3 Datasheet. Page #1

IQCG20S120C3
 datasheet

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IQCG20S120C3
 datasheet #2

Description

IQCG20S120C3 Silicon Controlled Rectifier, 1200/ 20A In Isolated TO247 Package  Pb-free lead finish; RoHS compliant 1 2 1 2 4 5 4 5 MAXIMUM RATINGS (per SCR), at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Average on-state current I 20 T(AV) T = 85oC, T = 125oC C j A Non-repetitive surge peak on-state current 340 I TSM T = 125oC, t = 10 ms j p I2t value for fusing I2t 574 A2s T = 125oC, t = 10 ms j p Rate of rise of on-state current dI/dt