IQIG35S120C3 SCR DATASHEET

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IQIG35S120C3 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 35 A
Maximum operating junction and storage temperature range Tstg, Tj ..79 °C
Triggering gate voltage VGT 0.78 V
Peak on-state voltage drop VTM 1.55 V
Triggering gate current IGT 62 mA
Package SOT-227

IQIG35S120C3 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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IQIG35S120C3 Datasheet. Page #1

IQIG35S120C3
 datasheet

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 datasheet #2

Description

IQIG35S120C3 PRELIMINARY DATASHEET Anti-Parallel Silicon Controlled Rectifier 1 1200V, 35A in SOT227 Package 2 1 3 3  High voltage & high current  Low on-state voltage 4  Suitable for over voltage control, motor control 2 4 circuit and heating control system  Pb-free lead finish; RoHS compliant MAXIMUM RATINGS (per SCR), T = 25oC unless otherwise noted C Parameter Symbol Value Units Average on-state current IT(AV) 35 o TC= 79oC, Tj= 180 C conduction half sine