IXHX40N150V1HV SCR DATASHEET

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IXHX40N150V1HV ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1500 V
Non repetitive surge peak on-state current ITSM 7.6 A
Junction to case thermal resistance RTH(j-c) 0.36 K/W
Package TO-247

IXHX40N150V1HV Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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IXHX40N150V1HV Datasheet. Page #1

IXHX40N150V1HV
 datasheet

Page #2

IXHX40N150V1HV
 datasheet #2

Description

Preliminary Technical Information VDM = 1500V 1500V MOS Gated IXHX40N150V1HV Thyristor A w/ Anti-Parallel Diode G K TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VDM TJ = 25°C to 150°C 1500 V VGK Continuous ±30 V G VGK Transient ±40 V K Tab A ITSM TC = 25°C, 1μs 7.6 kA TC = 25°C, 10μs 3.5 kA PD TC = 25°C 695 W G = Gate K = Cathode A = Anode Tab = Anode TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL Maximum Lead Temperature for Soldering 300 °