KCR100-8 SCR DATASHEET

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KCR100-8 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 600 V
Non repetitive surge peak on-state current ITSM 0.8 A
Triggering gate current IGT 0.8 mA

KCR100-8 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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KCR100-8 Datasheet. Page #1

KCR100-8
 datasheet

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KCR100-8
 datasheet #2

Description

SMD Type Thyristor Silicon Controlled Rectifier MCR100 (KCR100) ■ Features 1.70 0.1 ● Current-IGT : 200 μA ● ITRMS : 0.8 A. ● VRRM/ VDRM : MCR100-6: 400 V MCR100-6R: 400 V 0.42 0.1 MCR100-8: 600 V 0.46 0.1 MCR100-8R: 600 V ● Operating and storage junction temperature range ● TJ,Tstg : -55℃ to +150℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit On State Voltage (Note.1) VTM ITM= 1 A 1.7 Gate Trigger Vol