M40T80A Triac DATASHEET

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M40T80A ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 1 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum RMS on-state current IT(RMS) 40 A
Non repetitive surge peak on-state current ITSM 400 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 50 K/W
Junction to case thermal resistance RTH(j-c) 0.8 K/W
Triggering gate voltage VGT 1.3 V
Peak on-state voltage drop VTM 1.55 V
Triggering gate current IGT 50 mA
Holding current IH 60 mA

M40T80A Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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M40T80A Datasheet. Page #1

M40T80A
 datasheet

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M40T80A
 datasheet #2

Description

RoHS M40T Series RoHS SEMICONDUCTOR TRIACs, 40A Sunbberless FEATURES T2 T1 High current triac G Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated TO-3 package High commutation capability Packages are RoHS compliant APPLICATIONS Due to their clip assembly techinque, they provide a superior performance in surge current handling capabilities. MAIN FEATURES By using an internal ceramic pad, the M40T series provides voltag