MAC212A8 Triac DATASHEET

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MAC212A8 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 12 A
Non repetitive surge peak on-state current ITSM 100 A
Critical rate of rise of off-state voltage dV/dt 100 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 2.1 K/W
Triggering gate voltage VGT 0.9 V
Peak on-state voltage drop VTM 1.3 V
Triggering gate current IGT 12 mA
Holding current IH 6 mA
Package TO-220AB

MAC212A8 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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MAC212A8 Datasheet. Page #1

MAC212A8
 datasheet

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MAC212A8
 datasheet #2

Description

MAC212A8, MAC212A10 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are http://onsemi.com needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or TRIACS negative gate triggering. 12 AMPERES RMS F