MAC223A4 Triac DATASHEET

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MAC223A4 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type Triac
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 200 V
Maximum RMS on-state current IT(RMS) 25 A
Non repetitive surge peak on-state current ITSM 250 A
Critical rate of rise of off-state voltage dV/dt 40 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to ambient thermal resistance RTH(j-a) 60 K/W
Junction to case thermal resistance RTH(j-c) 1.2 K/W
Triggering gate voltage VGT 1.1 V
Peak on-state voltage drop VTM 1.4 V
Triggering gate current IGT 20 mA
Holding current IH 10 mA
Package TO-220AB

MAC223A4 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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Description

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MAC223/D MAC223 Series Triacs MAC223A Silicon Bidirectional Triode Thyristors Series . . . designed primarily for full-wave ac control applications such as lighting sysjtems, heater controls, motor controls and power supplies; or wherever full-wave silicon- gate-controlled devices are needed. • Off-State Voltages to 800 Volts TRIACs • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stabilit