MCR100-6 SCR DATASHEET

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MCR100-6 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.01 W
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum average on-state current IT(AVR) 0.8 A
Maximum RMS on-state current IT(RMS) 0.8 A
Non repetitive surge peak on-state current ITSM 10 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 35 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 200 K/W
Junction to case thermal resistance RTH(j-c) 75 K/W
Triggering gate voltage VGT 1 V
Peak on-state voltage drop VTM 1.35 V
Triggering gate current IGT 0.2 mA
Holding current IH 1 mA
Package TO-92_SOT-89

MCR100-6 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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MCR100-6
 datasheet

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Description

MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. SCRs Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for use in automatic insertion equipment. 0.8 A RMS 100 thru 600 V Features • Sensitive Gate A