MCR100-7 SCR DATASHEET

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MCR100-7 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.01 W
Maximum repetitive peak and off-state voltage VDRM 500 V
Maximum average on-state current IT(AVR) 1 A
Maximum RMS on-state current IT(RMS) 0.8 A
Non repetitive surge peak on-state current ITSM 10 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 35 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 200 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 0.2 mA
Holding current IH 5 mA
Package TO-92

MCR100-7 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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MCR100-7
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Description

MCR100-3/MCR100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8 Thyristors Small Signal Diode DO-92 A B G Features E Epitaxial planar die construction Surface device type mounting F Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate C Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Mechanical Data Case : TO-92 plastic package D Terminal: Matte tin