MCR100-8 SCR DATASHEET

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MCR100-8 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.01 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum average on-state current IT(AVR) 1 A
Maximum RMS on-state current IT(RMS) 1 A
Non repetitive surge peak on-state current ITSM 10 A
Critical repetitive rate of rise of on-state current dI/dt 50 A/µs
Critical rate of rise of off-state voltage dV/dt 35 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 200 K/W
Junction to case thermal resistance RTH(j-c) 50 K/W
Triggering gate voltage VGT 1 V
Peak on-state voltage drop VTM 1.6 V
Triggering gate current IGT 0.2 mA
Holding current IH 2 mA
Package TO-92_SOT-89_SOT-23

MCR100-8 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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Description

LITE-ON MCR100-8 SEMICONDUCTOR SCRs Sensitive Gate 0.25 AMPERES RMS Sillicon Controlled Rectifiers 600 VOLTS Reverse Blocking Thyristors SOT-23 FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other SOT-23 logic Circuits DIM. MIN. MAX. Blocking Voltage to 600 Volts A 0.89 1.20 On–State Current Rating of 0.25 Amperes RMS at 80℃ B 0.30 0.51 High Surge Current Capability — 9 Amperes C 0.085 0.18 Minimum and Maximum Values of IGT,