MCR12DSN SCR DATASHEET

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MCR12DSN ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum RMS on-state current IT(RMS) 12 A
Non repetitive surge peak on-state current ITSM 100 A
Triggering gate voltage VGT 1 V
Package TO-252_TO-251

MCR12DSN Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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MCR12DSN Datasheet. Page #1

MCR12DSN
 datasheet

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MCR12DSN
 datasheet #2

Description

MCR12DSM, MCR12DSN Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer http://onsemi.com applications such as motor control; process control; temperature, light and speed control; CDI (Capacitive Discharge Ignition); and small SCRs engines. 12 AMPERES RMS Features 600 - 800 VOLTS • Small Size • Passivated Die for Reliability and Uniformity • Low Level Triggering and Holding Characteristics G