MCR16N SCR DATASHEET

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MCR16N ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum RMS on-state current IT(RMS) 16 A
Non repetitive surge peak on-state current ITSM 160 A
Triggering gate voltage VGT 1 V
Triggering gate current IGT 0.02 mA
Package TO-220

MCR16N Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

MCR16N Datasheet. Page #1

MCR16N
 datasheet

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MCR16N
 datasheet #2

Description

MCR16N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed. http://onsemi.com Features SCRs • Blocking Voltage to 800 Volts 16 AMPERES RMS • On-State Current Rating of 16 Amperes RMS 800 VOLTS • High Surge Current Capability - 160 Amperes • Rugged Economical TO-220A