MCR25M SCR DATASHEET

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MCR25M ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 25 A
Non repetitive surge peak on-state current ITSM 300 A
Triggering gate voltage VGT 1 V
Triggering gate current IGT 0.03 mA
Package TO-220

MCR25M Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

MCR25M Datasheet. Page #1

MCR25M
 datasheet

Page #2

MCR25M
 datasheet #2

Description

MCR25D, MCR25M, MCR25N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed. http://onsemi.com Features SCRs 25 AMPERES RMS • Blocking Voltage to 800 Volts 400 thru 800 VOLTS • On-State Current Rating of 25 Amperes RMS • High Surge Current Capability - 300 Amperes G