MCR708AG SCR DATASHEET

DATASHEET SEARCH FORM

MCR708AG ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.1 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum average on-state current IT(AVR) 2.6 A
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 25 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 10 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 80 K/W
Junction to case thermal resistance RTH(j-c) 3 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 2.2 V
Triggering gate current IGT 25 mA
Holding current IH 5 mA
Package TO-252

MCR708AG Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

MCR708AG Datasheet. Page #1

MCR708AG
 datasheet

Page #2

MCR708AG
 datasheet #2

Description

MCR703A Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and http://onsemi.com remote control; and warning systems where reliability of operation is critical. SCRs Features 4.0 AMPERES RMS • Small Size 100 - 600 VOLTS • Passivated Die Surface for Reliability and Uniformity • Low Level Triggering and Ho