MCR8DCN SCR DATASHEET

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MCR8DCN ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum RMS on-state current IT(RMS) 8 A
Non repetitive surge peak on-state current ITSM 80 A
Triggering gate voltage VGT 1 V
Triggering gate current IGT 0.02 mA
Package TO-252

MCR8DCN Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

MCR8DCN Datasheet. Page #1

MCR8DCN
 datasheet

Page #2

MCR8DCN
 datasheet #2

Description

MCR8DCM, MCR8DCN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. http://onsemi.com Features SCRs • Small Size 8 AMPERES RMS • Passivated Die for Reliability and Uniformity 600 - 800 VOLTS • Low Level Triggering and Holding Characteristics • Available in Surface Mount Lead Form - Case 369C • Ep