MCR8N SCR DATASHEET

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MCR8N ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 800 V
Maximum RMS on-state current IT(RMS) 8 A
Non repetitive surge peak on-state current ITSM 80 A
Triggering gate voltage VGT 1 V
Triggering gate current IGT 0.02 mA
Package TO-220

MCR8N Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

MCR8N Datasheet. Page #1

MCR8N
 datasheet

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MCR8N
 datasheet #2

Description

MCR8N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed. http://onsemi.com Features SCRs • Blocking Voltage of 600 thru 800 Volts 8 AMPERES RMS • On-State Current Rating of 8 Amperes RMS at 80°C 600 thru 800 VOLTS • High Surge Current Capability - 80 Amperes • Ru