MCRN100-6 SCR DATASHEET

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MCRN100-6 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum RMS on-state current IT(RMS) 0.8 A
Maximum operating junction and storage temperature range Tstg, Tj -55..150 °C
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 0.2 mA
Holding current IH 5 mA
Package SOT-89

MCRN100-6 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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MCRN100-6 Datasheet. Page #1

MCRN100-6
 datasheet

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 datasheet #2

Description

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Thyristors SOT-89-3L MCRN100- 6,- 8 FEATURES 1.GATE Current-IGT : 200 µA 2.ANODE ITRMS : 0.8 A 3.KATHODE VRRM/ VDRM : MCRN100-6: 400 V MCRN100-8: 600 V Operating and storage junction temperature range TJ,Tstg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit * On state voltage VTM ITM=1A