MFX1000 SCR-module DATASHEET

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MFX1000 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum average on-state current IT(AVR) 1000 A
Non repetitive surge peak on-state current ITSM 28000 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 800 V/µs
Maximum operating junction and storage temperature range Tstg, Tj ..125 °C
Junction to case thermal resistance RTH(j-c) 0.05 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 1.95 V
Triggering gate current IGT 200 mA
Holding current IH 200 mA

MFX1000 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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MFX1000 Datasheet. Page #1

MFX1000
 datasheet

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MFX1000
 datasheet #2

Description

MFC1000 MFA1000 MFK1000 MFX1000 Thyristor/Diode Modules Features:  Isolated mounting base 2500V~ IT(AV) 1000A  Pressure contact technology with Incrtased power cycling capability VDRM/VRRM 600~1800V  Space and weight savings ITSM 28 KA Typical Applications: I2t 3920 103A2S  AC/DC Motor drives  Various rectifiers  DC supply for PWM inverter VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 180 half sine wave 50Hz I