MFY50 SCR-module DATASHEET

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MFY50 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum average on-state current IT(AVR) 50 A
Non repetitive surge peak on-state current ITSM 1200 A
Critical repetitive rate of rise of on-state current dI/dt 100 A/µs
Critical rate of rise of off-state voltage dV/dt 800 V/µs
Maximum operating junction and storage temperature range Tstg, Tj ..125 °C
Junction to case thermal resistance RTH(j-c) 0.48 K/W
Triggering gate voltage VGT 2.5 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 100 mA
Holding current IH 100 mA

MFY50 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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MFY50 Datasheet. Page #1

MFY50
 datasheet

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 datasheet #2

Description

MFG50 MFY50 Thyristor/Diode Modules(Non-isolated Type) Features:  Non-Isolated.Mounting base as common  Pressure contact technology with IT(AV) 50 A Incrtased power cycling capability VDRM/VRRM 800~1800 V  Low on-state voltage drop Typical Applications ITSM 1.2 A×103  Welding Power Supply I2t 7.2 A2 S*103  Various DC Power supplies  DC supply for PWM inverter VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 180 h