MHC400 SCR-module DATASHEET

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MHC400 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum average on-state current IT(AVR) 400 A
Non repetitive surge peak on-state current ITSM 7800 A
Critical repetitive rate of rise of on-state current dI/dt 200 A/µs
Critical rate of rise of off-state voltage dV/dt 800 V/µs
Maximum operating junction and storage temperature range Tstg, Tj ..115 °C
Junction to case thermal resistance RTH(j-c) 0.09 K/W
Triggering gate voltage VGT 3 V
Peak on-state voltage drop VTM 2.1 V
Triggering gate current IGT 200 mA
Holding current IH 100 mA

MHC400 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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MHC400 Datasheet. Page #1

MHC400
 datasheet

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 datasheet #2

Description

MHC400 MHA400 MHK400 MHX400 Fast Turn-off Thyristor/Fast recovery diode Modules Features:  Isolated mounting base 2500V~  Pressure contact technology with IT(AV) 400 A Incrtased power cycling capability VDRM /VRRM 600~1600 V  Space and weight savings Typical Applications ITSM 7.80 A×103  Inverter I2t 310 A2 S*103  Inductive heating  Chopper VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT Min Type Max 180 half sine wave 50Hz IT