MMIX1H60N150V1 SCR DATASHEET

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MMIX1H60N150V1 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1500 V
Non repetitive surge peak on-state current ITSM 32 A
Junction to case thermal resistance RTH(j-c) 0.5 K/W

MMIX1H60N150V1 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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MMIX1H60N150V1 Datasheet. Page #1

MMIX1H60N150V1
 datasheet

Page #2

MMIX1H60N150V1
 datasheet #2

Description

Preliminary Technical Information VDM = 1500V 1500V MOS Gated MMIX1H60N150V1 Thyristor A w/ Anti-Parallel Diode A G (Electrically Isolated Tab) G K K Isolated Tab Symbol Test Conditions Maximum Ratings VDM TJ = 25°C to 150°C 1500 V A VGK Continuous ±30 V VGK Transient ±40 V ITSM TC = 25°C, 1μs 32.0 kA K TC = 25°C, 10μs 11.8 kA PD TC = 25°C 446 W G TJ -55 ... +150 °C TJM 150 °C G = Gate K = Cathode Tstg -55 ... +150 °C A = Anode TL Maximum Lead Temperatur