MMJX1H40N150 SCR DATASHEET

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MMJX1H40N150 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum repetitive peak and off-state voltage VDRM 1500 V
Non repetitive surge peak on-state current ITSM 15.5 A

MMJX1H40N150 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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MMJX1H40N150 Datasheet. Page #1

MMJX1H40N150
 datasheet

Page #2

MMJX1H40N150
 datasheet #2

Description

Preliminary Technical Information VDM = 1500V 1500V MOS Gated MMJX1H40N150 Thyristor A A G (Electrically Isolated Tab) K G K Isolated Tab Symbol Test Conditions Maximum Ratings A VDM TJ = 25°C to 150°C 1500 V VGK Continuous ±30 V VGK Transient ±40 V K ITSM TC = 25°C, 1μs 15.5 kA TC = 25°C, 10μs 6.4 kA G PD TC = 25°C 320 W TJ -55 ... +150 °C TJM 150 °C G = Gate K = Cathode A = Anode Tstg -55 ... +150 °C TL Maximum Lead Temperature for Soldering 300 °C T