NK60TP12 SCR-module DATASHEET

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NK60TP12 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR-module
Maximum peak gate power PGM 5 W
Maximum repetitive peak and off-state voltage VDRM 1200 V
Maximum average on-state current IT(AVR) 60 A
Non repetitive surge peak on-state current ITSM 1500 A
Critical rate of rise of off-state voltage dV/dt 1000 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..150 °C
Junction to case thermal resistance RTH(j-c) 1 K/W
Triggering gate voltage VGT 2 V
Peak on-state voltage drop VTM 1.8 V
Triggering gate current IGT 100 mA
Holding current IH 150 mA

NK60TP12 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NK60TP12 Datasheet. Page #1

NK60TP12
 datasheet

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 datasheet #2

Description

RoHS NK60TP Series RoHS SEMICONDUCTOR Nell High Power Products Three-Phase Bridge + Thyristor, 60A ( Low Profile Package ) FEATURES Three-phase bridge and a thyristor High surge current capability Planar thyristor chip Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DBC) Low thermal resistance Compliant to RoHS lsolation voltage up to 2500V Compact package, one screw mounting 1,2 8,9 13,14 Applications lnverter for AC or DC motor control