NTE54002 SCR DATASHEET

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NTE54002 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 40 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum average on-state current IT(AVR) 35 A
Maximum RMS on-state current IT(RMS) 55 A
Non repetitive surge peak on-state current ITSM 550 A
Critical repetitive rate of rise of on-state current dI/dt 175 A/µs
Critical rate of rise of off-state voltage dV/dt 500 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..125 °C
Junction to case thermal resistance RTH(j-c) 0.5 K/W
Triggering gate voltage VGT 1.5 V
Peak on-state voltage drop VTM 1.8 V
Triggering gate current IGT 40 mA
Holding current IH 60 mA
Package TO-220

NTE54002 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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 datasheet

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 datasheet #2

Description

NTE54000 thru NTE54004 Silicon Controlled Rectifier (SCR) 55 Amp, TO220 Description: The NTE54000 thru NTE54004 are half-wave, unidirectional, gate-controlled silicon controlled rectifiers (SCR) packaged in a TO220 type case featuring glass-passivated junctions to ensure long- term reliability and perimeter stability. Features: D High Voltage Capability D High Surge Capability D Glass-Passivated Chip Absolute Maximum Ratings: (TA = +25°C, 60Hz with a resistive load unless otherwis