NTE5402 SCR DATASHEET

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NTE5402 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 100 V
Maximum RMS on-state current IT(RMS) 0.8 A
Non repetitive surge peak on-state current ITSM 8 A
Critical rate of rise of off-state voltage dV/dt 5 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..100 °C
Junction to ambient thermal resistance RTH(j-a) 200 K/W
Junction to case thermal resistance RTH(j-c) 5 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 1.7 V
Triggering gate current IGT 0.05 mA
Holding current IH 5 mA
Package TO-92

NTE5402 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

NTE5402 Datasheet. Page #1

NTE5402
 datasheet

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NTE5402
 datasheet #2

Description

NTE5400 thru NTE5406 Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate, TO92 Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR-thyristor) rated at 0.8 amps RMS maximum on-state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millamp holding current and 8 amp surge ca- pabilities. Available in a TO92 plastic package, these devices feature ex