NTE5410 SCR DATASHEET

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NTE5410 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current ITSM 40 A
Critical rate of rise of off-state voltage dV/dt 5 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..100 °C
Junction to case thermal resistance RTH(j-c) 5 K/W
Triggering gate voltage VGT 0.8 V
Peak on-state voltage drop VTM 2.2 V
Triggering gate current IGT 0.2 mA
Holding current IH 5 mA
Package TO-205AA

NTE5410 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5410 Datasheet. Page #1

NTE5410
 datasheet

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NTE5410
 datasheet #2

Description

NTE5408 thru NTE5410 Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate, TO5 Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void-free glass-passivated chips and are hermeti- cally sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with a gate current of 200µA. These NTE SCRs are reverse-blocking triode thyristors and may be switched from o