NTE5415 SCR DATASHEET

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NTE5415 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 0.5 W
Maximum repetitive peak and off-state voltage VDRM 400 V
Maximum average on-state current IT(AVR) 2.6 A
Non repetitive surge peak on-state current ITSM 25 A
Critical rate of rise of off-state voltage dV/dt 10 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to ambient thermal resistance RTH(j-a) 75 K/W
Junction to case thermal resistance RTH(j-c) 3 K/W
Triggering gate voltage VGT 1 V
Peak on-state voltage drop VTM 2.2 V
Triggering gate current IGT 0.2 mA
Holding current IH 5 mA
Package TO-225

NTE5415 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

Replacement Search

NTE5415 Datasheet. Page #1

NTE5415
 datasheet

Page #2

NTE5415
 datasheet #2

Description

NTE5411 thru NTE5416 Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate, TO126 Description: The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for high volume consumer applications such as temperature, light, and speed control: process and re- mote control, and warning systems where reliability of operation is important. Features: D Passivated Surface for Reliability and Uniformity D Power Rated at Economical Prices D Practical Level Trigg