NTE5429 SCR DATASHEET

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NTE5429 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 20 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum RMS on-state current IT(RMS) 7 A
Non repetitive surge peak on-state current ITSM 80 A
Critical rate of rise of off-state voltage dV/dt 100 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..110 °C
Junction to case thermal resistance RTH(j-c) 2.5 K/W
Triggering gate voltage VGT 1.5 V
Peak on-state voltage drop VTM 2 V
Triggering gate current IGT 25 mA
Holding current IH 50 mA
Package TO-205AA

NTE5429 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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NTE5429 Datasheet. Page #1

NTE5429
 datasheet

Page #2

NTE5429
 datasheet #2

Description

NTE5427 thru NTE5429 Silicon Controlled Rectifier (SCR) 7 Amp, TO5 Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5429 . . . . . . . . . . . . . . . . . . . . .