NTE5448 SCR DATASHEET

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NTE5448 ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL VALUES UNITS
Type SCR
Maximum peak gate power PGM 5 W
Maximum repetitive peak and off-state voltage VDRM 600 V
Maximum average on-state current IT(AVR) 5.1 A
Maximum RMS on-state current IT(RMS) 8 A
Non repetitive surge peak on-state current ITSM 80 A
Critical rate of rise of off-state voltage dV/dt 50 V/µs
Maximum operating junction and storage temperature range Tstg, Tj -40..100 °C
Junction to ambient thermal resistance RTH(j-a) 40 K/W
Junction to case thermal resistance RTH(j-c) 2.5 K/W
Triggering gate voltage VGT 0.75 V
Peak on-state voltage drop VTM 1 V
Triggering gate current IGT 7 mA
Holding current IH 6 mA
Package TO-127

NTE5448 Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

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 datasheet

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 datasheet #2

Description

NTE5442 thru NTE5448 Silicon Controlled Rectifier (SCR) 8 Amp, TO127 Description: The NTE5442 thru NTE5448 are silicon controlled rectifiers (SCR’s) in a TO127 type package de- signed for high-volume consumer phase-control applications such as motor speed, temperature, and light controls, and for fast switching applications in ignition and starting systems, voltage regula- tors, vending machines, and lamp drivers. Features: D Small, Rugged Construction D Practical Level Triggering